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ISG6109QA

GaN Power Transistor by Innoscience (83 more products)
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The ISG6109QA from Innoscience is a GaN Power Transistor with Drain Source Voltage -7 to 700 V, Drain Source Resistance 320 to 450 milli-ohm, Continous Drain Current 4 A, Pulsed Drain Current 8 A, Output Capacitance 13.7 pF. Tags: Surface Mount. More details for ISG6109QA can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISG6109QA
  • Manufacturer
    Innoscience
  • Description
    -7 to 700 V, 320 to 450 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Drain Source Voltage
    -7 to 700 V
  • Drain Source Resistance
    320 to 450 milli-ohm
  • Continous Drain Current
    4 A
  • Pulsed Drain Current
    8 A
  • Output Capacitance
    13.7 pF
  • Turn-on Delay Time
    25 ns
  • Turn-off Delay Time
    35 ns
  • Rise Time
    10 ns
  • Fall Time
    10 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN6x8-30L
  • Applications
    AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback, ACF, Half Bridge, Full Bridge, PD Adaptor, LED Lighting, Solar Micro Inverter, Server and Telecom Power Supply

Technical Documents
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