The GAN039-650NTB from Nexperia is a Gallium Nitride (GaN) Field Effect Transistor that is ideal for hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, and UPS inverters, and servo motor drive applications. The transistor has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 4 V, and a drain-source on- resistance of 33 milli-ohms.  It has a continuous drain current of less than 60 A. This transistor incorporates Nexperia's advanced GaN HEMT H2 technology, ensuring unparalleled reliability in high-voltage applications. It features a hybrid design, seamlessly integrating low-voltage Silicon MOSFET technologies to optimize performance and efficiency.

This transistor boasts a robust gate oxide terminal with a gate-source voltage of ±20 V, exceptional durability, and reliability in demanding operational conditions. It features a low forward voltage of the body diode, thereby minimizing losses and streamlining dead-time adjustments for enhanced operational efficiency. This transistor features CCPAK package technology, offering improved reliability, optimal cooling, and easy soldering. It is available in a surface-mount package that measures 12.3 x 12.2 x 2.65 mm.