1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Nexperia
  6. GAN041-650WSB

GAN041-650WSB

GaN Power Transistor by Nexperia (14 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

GAN041-650WSB Image

The GAN041-650WSB from Nexperia is a GaN Power Transistor with Gate Threshold Voltage 2.2 to 4.5 V, Drain Source Voltage 650 V, Drain Source Resistance 35 to 41 milli-ohm, Continous Drain Current 33.4 to 47.2 A, Total Charge 22 nc. Tags: Through Hole. More details for GAN041-650WSB can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GAN041-650WSB
  • Manufacturer
    Nexperia
  • Description
    650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

General

  • Configuration
    Single
  • Gate Threshold Voltage
    2.2 to 4.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    35 to 41 milli-ohm
  • Continous Drain Current
    33.4 to 47.2 A
  • Total Charge
    22 nc
  • Input Capacitance
    1500 pF
  • Output Capacitance
    147 pF
  • Turn-on Delay Time
    14 ns
  • Turn-off Delay Time
    36 ns
  • Rise Time
    14 ns
  • Fall Time
    17 ns
  • Temperature operating range
    -55 to +175 °C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Hard and soft switching converters for industrial and datacom power, Bridgeless totempole PFC, PV and UPS inverters, Servo motor drives
  • Dimensions
    20.45 x 15.6 x 4.95 mm

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products