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GANB4R8-040CBA

GaN Power Transistor by Nexperia (14 more products)
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The GANB4R8-040CBA from Nexperia is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.4 V, Drain Source Voltage 40 V, Drain Source Resistance 4 to 7 milli-ohm, Continous Drain Current 20 A, Pulsed Drain Current 100 A. Tags: Wafer. More details for GANB4R8-040CBA can be seen below.

Product Specifications

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Product Details

  • Part Number
    GANB4R8-040CBA
  • Manufacturer
    Nexperia
  • Description
    40 V, 4 to 7 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.4 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    4 to 7 milli-ohm
  • Continous Drain Current
    20 A
  • Pulsed Drain Current
    100 A
  • Total Charge
    15.8 nC
  • Input Capacitance
    887 pF
  • Output Capacitance
    381 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Package
    WLCSP
  • Applications
    High-side load switch, OVP protection in smart phone USB port, Power switch circuits, Stand-by power system
  • Dimensions
    2.1 x 2.1 mm

Technical Documents
View details on the manufacturer's website
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