1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Teledyne e2v HiRel Electronics
  6. TDG650E15BEPF

TDG650E15BEPF

Download Datasheet Request Quote

Note : Your request will be directed to Teledyne e2v HiRel Electronics.

The TDG650E15BEPF from Teledyne e2v HiRel Electronics is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 100 to 258 milli-ohm, Continous Drain Current 15 A, Pulsed Drain Current 30 A. Tags: Die. More details for TDG650E15BEPF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TDG650E15BEPF
  • Manufacturer
    Teledyne e2v HiRel Electronics
  • Description
    650 V, 100 to 258 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    100 to 258 milli-ohm
  • Continous Drain Current
    15 A
  • Pulsed Drain Current
    30 A
  • Total Charge
    3.3 nC
  • Input Capacitance
    120 pF
  • Output Capacitance
    31 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    High efficiency power conversion, High density power conversion, ac-dc Converters, Bridgeless Totem Pole PFC, ZVS Phase Shifted Full Bridge, Half & Full Bridge topologies, Synchronous Buck or Boost, Uninterruptable Power Supplies, Motor Drives, Single and
  • Dimensions
    5 x 6.6 x 0.51 mm

Technical Documents
View details on the manufacturer's website
View similar products