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TDG650E30BEP

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The TDG650E30BEP from Teledyne e2v HiRel Electronics is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 50 to 150 milli-ohm, Continous Drain Current 30 A, Pulsed Drain Current 60 A. Tags: Die. More details for TDG650E30BEP can be seen below.

Product Specifications

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Product Details

  • Part Number
    TDG650E30BEP
  • Manufacturer
    Teledyne e2v HiRel Electronics
  • Description
    650 V, 50 to 150 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    50 to 150 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    60 A
  • Total Charge
    6.1 nC
  • Input Capacitance
    242 pF
  • Output Capacitance
    65 pF
  • Turn-on Delay Time
    4.3 ns
  • Turn-off Delay Time
    8.2 ns
  • Rise Time
    4.9 ns
  • Fall Time
    5.2 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    High efficiency power conversion, High density power conversion, ac-dc Converters, Bridgeless Totem Pole PFC, ZVS Phase Shifted Full Bridge, Half & Full Bridge topologies, Synchronous Buck or Boost, Uninterruptable Power Supplies, Motor Drives, Single and
  • Dimensions
    7.1 x 8.5 x 0.56 mm

Technical Documents
View details on the manufacturer's website
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