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TP120H058WS

GaN Power Transistor by Transphorm (32 more products)
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The TP120H058WS from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 3.2 to 4.7 V, Drain Source Voltage 1200 V, Drain Source Resistance 58 to 119 milli-ohm, Continous Drain Current 28 A, Pulsed Drain Current 78 A. Tags: Through Hole. More details for TP120H058WS can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP120H058WS
  • Manufacturer
    Transphorm
  • Description
    1200 V, 58 to 119 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    3.2 to 4.7 V
  • Drain Source Voltage
    1200 V
  • Drain Source Resistance
    58 to 119 milli-ohm
  • Continous Drain Current
    28 A
  • Pulsed Drain Current
    78 A
  • Total Charge
    15 nC
  • Input Capacitance
    930 pF
  • Output Capacitance
    84 pF
  • Turn-on Delay Time
    57.6 ns
  • Turn-off Delay Time
    83.2 ns
  • Rise Time
    10.8 ns
  • Fall Time
    12.8 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO -247
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor

Technical Documents
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