The TP65H050G4QS-TR from Transphorm is a GaN Field Effect Transistor that combines state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of 105 milli-ohms. This transistor has a continuous drain current of up to 34 A and a pulsed drain current of less than 150 A. It is based on the Gen IV SuperGaN platform that employs advanced epi and patented design technologies. This GaN transistor is a normally-off device that exhibits lower gate charge, output capacitance, crossover loss, and reverse recovery charge to improve efficiency over silicon counterparts. It has a robust design that is characterized by its wide gate safety margin and tolerance to transient over-voltage. 

This transistor has reduced system size and weight which improves its power density while lowering overall system cost. It can be driven simply with commonly used gate drivers and supports hard and soft switching circuits. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 10 x 12 mm and is ideal for datacom, broad industrial, PV inverter, and servo motor applications.