The AOGF40B65H2AL from Alpha & Omega Semiconductor is an Insulated Gate Bipolar Transistor. It has a collector-emitter breakdown voltage of 650 V, a gate threshold voltage of 4.7 V, and a saturated collector-emitter of 2.05 V. This Insulated Gate Bipolar Transistor (IGBT) has a continuous collector current of 80 A and a peak collector current of less than 120 A. It is based on AOS' AlphaIGBT (α IGBT) technology and integrates a soft and fast recovery anti-parallel diode. This IGBT has low conduction loss and switching loss. It has controllable turn-on di/dt features and offers lower EMI emissions. This IGBT is available in a through-hole package that measures 15.35 x 14.30 x 5.5 mm and is suitable for welding machines, UPS and solar inverters, and very high switching frequency applications.