The DGTD65T15H2TF from Diodes Incorporated is a Field Stop Trench IGBT that is ideal for motor drive applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.65 V, and a gate-emitter threshold voltage of up to 5.5 V. This IGBT has a collector current of less than 30 A and a power dissipation of up to 48 W. It integrates an ultra-soft, fast-recovery anti-parallel diode to enhance the performance in applications requiring quick switching and low reverse recovery time. It exhibits positive temperature coefficient characteristics with low electromagnetic interference (EMI) and allows for easy paralleling operations. This RoHS-compliant IGBT is available in a through-hole package that measures 30.60 x 10.40 x 4.80 mm.