DIF075F065

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DIF075F065 Image

The DIF075F065 from Diotec Semiconductor is a Fieldstop Trench Gate fast-switching IGBT with a reverse diode. It has a collector-emitter breakdown voltage of 650 V, a gate threshold voltage of 4.1 V, and a saturated collector-emitter voltage of 1.65 V. It has a power dissipation of 385 W and a switching frequency of 80-100 kHz. This RoHS-compliant IGBT is designed using Trench Gate and Fieldstop technology and provides short-circuit protection. It is available in a through-hole package that measures 15.94 x 40.92 x 5 mm and is ideal for frequency inverters, AC and DC motor drives, and commercial and industrial applications.

Product Specifications

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Product Details

  • Part Number
    DIF075F065
  • Manufacturer
    Diotec Semiconductor
  • Description
    650 V Fieldstop Trench Gate IGBT

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.1 V
  • DC Collector Current
    75 to 100 A
  • Peak Collector Current
    300 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -200 to 200 nA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    385 W
  • Package
    TO-247-4L
  • Package Type
    Through Hole
  • Industry
    Commercial, Industrial
  • Applications
    Frequency inverters, AC and DC motor drives
  • RoHS Compliant
    Yes

Technical Documents

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