The DIW030F135 from Diotec Semiconductor is a Fast-Switching IGBT that is ideal for frequency inverters, and AC and DC motor drive applications. It has a collector-emitter breakdown voltage of up to 1350 V, a saturated collector-emitter voltage of 2.3 V, and a gate-emitter voltage of ±20 V. This IGBT has a continuous collector current of less than 60 A and a gate-emitter leakage current of up to ±100 nA. It has a power dissipation of less than 350 W.

This RoHS-compliant IGBT employs Trench Field Stop Technology, which significantly enhances the performance and efficiency in high-voltage applications. It supports soft switching, reducing voltage and current stress during transitions. This IGBT is capable of parallel operation allowing for flexibility in design. It is designed to be short-circuit proof thereby enhancing reliability in various applications. This REACH-compliant IGBT is available in a through-hole package that measures 40.9 x 15.9 x 5 mm.