DIM500ACM65-TS000

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DIM500ACM65-TS000 Image

The DIM500ACM65-TS000 from Dynex Semiconductor is an N-channel Enhancement Mode Single Switch IGBT Module that is ideal for high-reliability inverters, motor controllers, choppers, and traction drive applications. It has a collector-to-emitter voltage of up to 6500 V, a gate-emitter voltage of ±20 V, and a saturated collector-to-emitter voltage of 3 V. This IGBT has a DC collector current of up to 500 A and a gate-emitter leakage current of less than 1 µA. It has a large reverse bias safe operating area (RBSOA) and can withstand short-circuit current up to 10 µs, making it ideal for traction drives and other systems that demand high thermal cycling capability. This single-switch IGBT has an electrically separated base plate and a low inductance design, thereby allowing circuit designers to optimize circuit topologies. It also integrates a grounded heat sink to ensure the safety of operation. This IGBT module is available in a chassis-mount package that measures 190 x 140 x 38 mm.

Product Specifications

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Product Details

  • Part Number
    DIM500ACM65-TS000
  • Manufacturer
    Dynex Semiconductor
  • Description
    6500 V N-Channel Enhancement Mode Single Switch IGBT Module

General

  • Types
    Chopper IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    190 x 140 x 38 mm
  • Saturated Collector Emitter Voltage
    3 V
  • DC Collector Current
    500 A
  • Peak Collector Current
    1000 A
  • DC Forward Current
    500 A
  • Peak Forward Current
    1000 A
  • Junction Temperature
    125 Degree C
  • Gate Emitter Leakage Current
    1 µA
  • Collector Emitter Voltage
    6500 V
  • Power Dissipation
    6600 W
  • Package Type
    Chassis Mount
  • Applications
    High Reliability Inverters, Motor Controllers, Traction drives, Choppers

Technical Documents

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