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FGZ75N65WE

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FGZ75N65WE Image

The FGZ75N65WE from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.2 V, DC Collector Current 75 to 224 A, DC Forward Current 75 to 111 A, Junction Temperature -40 to 175 Degree C. More details for FGZ75N65WE can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGZ75N65WE
  • Manufacturer
    Fuji Electric
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.2 V
  • DC Collector Current
    75 to 224 A
  • DC Forward Current
    75 to 111 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    260 to 520 W
  • Package
    TO247
  • Package Type
    Through Hole
  • Applications
    Inverter, Welding matchines, Uniterruptible power supply, PV Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
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