FF450R45T3E4B5BPSA1

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FF450R45T3E4B5BPSA1 Image

The FF450R45T3E4B5BPSA1 from Infineon Technologies is a Trench + Field Stop IGBT that is ideal for traction drives and medium-voltage converter applications. It has a collector-emitter breakdown voltage of up to 4500 V, a saturated collector-emitter voltage of 2.35 V, and a gate-emitter voltage of 6 V. This RBSOA-rated IGBT module has a continuous collector current of less than 450 A and a gate-emitter leakage current of up to 400 nA. It has a power dissipation of less than 1500 kW. This SCSOA-rated IGBT incorporates Trench + Field Stop IGBT4 technology, with an AlSiC base plate for increased thermal cycling capability. It benefits from enhanced insulation of 10.4 kV AC up to 60 s and has high creepage and clearance distance. This EN45545-2-rated IGBT is available in a module that measures 127 x 99.8 x 40 mm.

Product Specifications

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Product Details

  • Part Number
    FF450R45T3E4B5BPSA1
  • Manufacturer
    Infineon Technologies
  • Description
    4500 V Trench + Field Stop IGBT for Traction Applications

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    6 V
  • Dimensions
    127 x 99.8 x 40 mm
  • Saturated Collector Emitter Voltage
    2.35 V
  • DC Collector Current
    450 A
  • Peak Collector Current
    900 A
  • Gate Emitter Leakage Current
    400 nA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    4500 V
  • Power Dissipation
    1500 kW
  • Package Type
    Module
  • Applications
    Traction drives, Medium-voltage converters

Technical Documents

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