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IGB15N65S5

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IGB15N65S5 Image

The IGB15N65S5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 23 to 35 V, DC Forward Current 23 to 35 A, Gate Emitter Leakage Current 0.1 uA. More details for IGB15N65S5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGB15N65S5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    23 to 35 V
  • DC Forward Current
    23 to 35 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    52 to 105 W
  • Package
    PG-TO263-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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