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IGB20N65S5

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IGB20N65S5 Image

The IGB20N65S5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 28 to 40 V, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGB20N65S5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGB20N65S5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    28 to 40 V
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    62.5 to 12.5 W
  • Package
    D2PAK (TO-263-3)
  • Package Type
    Through Hole
  • Applications
    Energy Generation -Solar String Inverter -Solar Micro Inverter, Industrial Power Supplies -Industrial SMPS -Industrial UPS, Metal Treatment -Welding, Energy Distribution -Energy Storage, Infrastructure–Charge -Charger
  • RoHS Compliant
    Yes

Technical Documents
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