1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IGD10N65T6

IGD10N65T6

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IGD10N65T6 Image

The IGD10N65T6 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 14 to 23 V, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGD10N65T6 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGD10N65T6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    14 to 23 V
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    37.5 to 75 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    Drives, GPD Major home appliances, Air conditioning, Other major home appliances Small home appliances, Other small home appliances
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products