1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IGP30N65F5

IGP30N65F5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IGP30N65F5 Image

The IGP30N65F5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.60 to 2.10 V, DC Collector Current 35 to 55 V, Gate Emitter Leakage Current 0.1 uA, Operating Temperature -40 to 175 Degree C. More details for IGP30N65F5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGP30N65F5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.10 V
  • DC Collector Current
    35 to 55 V
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    93 to 188 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products
Press Release Link  »

Latest IGBTs

View more products