1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IGW15T120

IGW15T120

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IGW15T120 Image

The IGW15T120 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.2 V, DC Collector Current 15 to 30 V, Gate Emitter Leakage Current 0.1 uA, Operating Temperature -40 to 150 Degree C. More details for IGW15T120 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGW15T120
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.2 V
  • DC Collector Current
    15 to 30 V
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    110 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Qualification
    AECQ101
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products
Press Release Link  »

Latest IGBTs

View more products