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IHW25N120E1

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IHW25N120E1 Image

The IHW25N120E1 from Infineon Technologies is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 1.50 to 2 V, DC Collector Current 25 to 50 V, DC Forward Current 25 to 50 A, Gate Emitter Leakage Current 0.1 uA. More details for IHW25N120E1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW25N120E1
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    1.50 to 2 V
  • DC Collector Current
    25 to 50 V
  • DC Forward Current
    25 to 50 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    92.4 to 231 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Inductive cooking, Inverterized microwave ovens, Resonant converters, Softs witching applications
  • RoHS Compliant
    Yes

Technical Documents
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