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IHW30N135R5

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IHW30N135R5 Image

The IHW30N135R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 1.65 to 2.05 V, DC Collector Current 30 to 60 V, DC Forward Current 30 to 60 A, Gate Emitter Leakage Current 0.1 uA. More details for IHW30N135R5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW30N135R5
  • Manufacturer
    Infineon Technologies
  • Description
    1350 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.05 V
  • DC Collector Current
    30 to 60 V
  • DC Forward Current
    30 to 60 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1350 V
  • Power Dissipation
    165 to 330 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Induction cooking, Microwave ovens
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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