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IHW30N65R6

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IHW30N65R6 Image

The IHW30N65R6 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.26 to 1.60 V, DC Collector Current 41 to 65 A, Peak Collector Current 90 A, DC Forward Current 15 to 25 A. More details for IHW30N65R6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW30N65R6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.26 to 1.60 V
  • DC Collector Current
    41 to 65 A
  • Peak Collector Current
    90 A
  • DC Forward Current
    15 to 25 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    19 to 163 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Induction Cooking, Microwave Ovens
  • RoHS Compliant
    Yes

Technical Documents
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