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IHW40N65R6

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IHW40N65R6 Image

The IHW40N65R6 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.29 to 1.60 V, DC Collector Current 54 to 83 A, Peak Collector Current 120 A, DC Forward Current 21 to 35 A. More details for IHW40N65R6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW40N65R6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.29 to 1.60 V
  • DC Collector Current
    54 to 83 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    21 to 35 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    27 to 210 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Induction Cooking, Microwave Ovens
  • RoHS Compliant
    Yes

Technical Documents
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