1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKA15N65H5

IKA15N65H5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKA15N65H5 Image

The IKA15N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 8.5 to 14 V, DC Forward Current 7.3 to 12.3 A, Junction Temperature 175 Degree C. More details for IKA15N65H5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKA15N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    8.5 to 14 V
  • DC Forward Current
    7.3 to 12.3 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    16.7 to 33.3 W
  • Package
    TO-220FP-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products