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IKD10N60R

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IKD10N60R Image

The IKD10N60R from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 10 to 20 V, DC Forward Current 10 to 20 A, Junction Temperature 175 Degree C. More details for IKD10N60R can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKD10N60R
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    10 to 20 V
  • DC Forward Current
    10 to 20 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    150 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    Consumer motor drives
  • RoHS Compliant
    Yes

Technical Documents
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