1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKW40N120CS7

IKW40N120CS7

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKW40N120CS7 Image

The IKW40N120CS7 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.65 to 2 V, DC Collector Current 56 to 82 A, Peak Collector Current 120 A, DC Forward Current 46 to 69 A. More details for IKW40N120CS7 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKW40N120CS7
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2 V
  • DC Collector Current
    56 to 82 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    46 to 69 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    104 to 357 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Industrial Drives, Industrial Power Supplies, Solar Inverters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products