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IKW40N65ES5

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The IKW40N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 50 to 79 V, Peak Collector Current 50 to 79 A, DC Forward Current 50 to 79 A. More details for IKW40N65ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW40N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    50 to 79 V
  • Peak Collector Current
    50 to 79 A
  • DC Forward Current
    50 to 79 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    115 to 230 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Resonant converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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