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IKW40N65ET7

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IKW40N65ET7 Image

The IKW40N65ET7 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.65 V, DC Collector Current 49.5 to 76 V, DC Forward Current 43 to 72 A, Gate Emitter Leakage Current 0.1 uA. More details for IKW40N65ET7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW40N65ET7
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.65 V
  • DC Collector Current
    49.5 to 76 V
  • DC Forward Current
    43 to 72 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    115.4 to 230.8 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Drives -Servo-GPD, Industrial Power Supplies-Industrial UPS-Residential UPS, Energy Generation-Solar Central Inverter-Solar String Inverter-SolarPump
  • RoHS Compliant
    Yes

Technical Documents
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