1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKW50N65F5

IKW50N65F5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKW50N65F5 Image

The IKW50N65F5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.60 to 2.10 V, DC Collector Current 56 to 80 V, Peak Collector Current 56 to 80 A, DC Forward Current 27 to 40 A. More details for IKW50N65F5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKW50N65F5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.10 V
  • DC Collector Current
    56 to 80 V
  • Peak Collector Current
    56 to 80 A
  • DC Forward Current
    27 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    152.5 to 305 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products