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IKW75N65ES5

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The IKW75N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.42 to 1.75 V, DC Collector Current 80 to 80 V, DC Forward Current 80 A, Junction Temperature 175 Degree C. More details for IKW75N65ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW75N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.42 to 1.75 V
  • DC Collector Current
    80 to 80 V
  • DC Forward Current
    80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    197 to 395 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Resonant converters, Uninterruptible, power, supplies, Welding coverters, mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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