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IKWH30N65WR6

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IKWH30N65WR6 Image

The IKWH30N65WR6 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.45 to 1.75 V, DC Collector Current 30 to 60 A, Peak Collector Current 90 A, DC Forward Current 11 to 20 A. More details for IKWH30N65WR6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKWH30N65WR6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.75 V
  • DC Collector Current
    30 to 60 A
  • Peak Collector Current
    90 A
  • DC Forward Current
    11 to 20 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    83 to 165 W
  • Package
    PG-TO247-3-HCC
  • Package Type
    Through Hole
  • Applications
    PFC. Welding, ZCS applications
  • RoHS Compliant
    Yes

Technical Documents
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