1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKY75N120CH3

IKY75N120CH3

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKY75N120CH3 Image

The IKY75N120CH3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2 to 2.50 V, DC Collector Current 75 to 150 V, DC Forward Current 75 to 150 A, Gate Emitter Leakage Current 0.1 uA. More details for IKY75N120CH3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKY75N120CH3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2 to 2.50 V
  • DC Collector Current
    75 to 150 V
  • DC Forward Current
    75 to 150 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    256 to 938 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    IndustrialUPS, Charger, Energy Storage, Three-level Solar String Inverter
  • Qualification
    AECQ101
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products
Press Release Link  »

Latest IGBTs

View more products