The IKZA75N65EH7XKSA1 from Infineon Technologies is a Field Stop Trench IGBT that is ideal for industrial UPS, EV-charging, string inverter, and welding applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.4 V, and a gate-emitter threshold voltage of 3.85 V. This IGBT has a DC collector current of up to 80 A and a gate-emitter leakage current of less than 100 nA. It delivers peak efficiency with low switching losses, minimal saturated collector-to-emitter voltage, and integrates a fast-recovery diode, ensuring flawless power management. This RoHS-compliant IGBT is available in a through-hole package that measures 15.90 x 21.10 x 5.10 mm.