APTGX600A120T6LIAG

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APTGX600A120T6LIAG Image

The APTGX600A120T6LIAG from Microchip Technology is an IGBT Power Module. It has a collector-emitter voltage of up to 1200 V, a gate threshold voltage of 5.8 V, and a saturated collector-emitter voltage of 1.55 V. This IGBT has a continuous collector current of up to 1000 A and a peak collector current of less than 1200 A. It utilizes IGBT 7 technology that offers low-voltage drop and low-leakage current. This IGBT has a power dissipation of 2941 W and has a very low stray inductance. It incorporates an internal thermistor for temperature monitoring. This IGBT supports M4 and M5 power connectors and M2.5 signals connectors. It is fabricated using an AlN substrate for improved thermal performance and has a copper baseplate. This low-profile RoHS-compliant IGBT is available as a module that measures 108 x 62 x 15 mm and is ideal for welding converters, switched-mode power supplies, uninterruptible power supplies, electric vehicle motors and traction drive applications.

Product Specifications

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Product Details

  • Part Number
    APTGX600A120T6LIAG
  • Manufacturer
    Microchip Technology
  • Description
    1200 V IGBT Power Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.8 V
  • DC Collector Current
    600 A
  • Peak Collector Current
    1200 A
  • DC Forward Current
    450 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    600 nA
  • Operating Temperature
    -40 to 125 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    2941 W
  • Package
    SP6LI
  • Package Type
    Module
  • Industry
    Automotive, Commercial, Industrial
  • Applications
    Welding converters, Switched-mode power supplies, Uninterruptible power supplies, Electric Vehicle (EV) motor and traction drive
  • RoHS Compliant
    Yes

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