NGW40T65M3DFP

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The NGW40T65M3DFP from Nexperia is a Field-Stop Trench IGBT that has been optimized to support high-voltage, high-frequency industrial power inverter and servo motor applications. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 5 V, and a collector-emitter saturation voltage of 1.5 V. This IGBT has a continuous collector current of up to 72 A and a peak collector current of less than 120 A. It is based on 3rd generation technology and combines carrier-stored trench-gate and field-stop structures. This IGBT has optimized turn-off (conduction and switching) losses and can withstand a short-circuit current of up to 5 µs. It is manufactured with stable and tight parameters that allow for easy paralleling of several IGBTs.

This RoHS-compliant IGBT is available in a through-hole package that measures 16.13 x 5.21 mm and is ideal for welding, motor drives in industrial and consumer appliances, power inverters (e.g. EV charging, UPS), and induction heating applications.

Product Specifications

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Product Details

  • Part Number
    NGW40T65M3DFP
  • Manufacturer
    Nexperia
  • Description
    650 V Field-Stop Trench IGBT

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 to 1.9 V
  • DC Collector Current
    48 to 72 A
  • Peak Collector Current
    120 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.1 µA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    142 to 283 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Switching Speed
    13 to 220 ns
  • Industry
    Industrial, Commercial
  • Applications
    Power inverters, Uninterruptible Power Supply (UPS) inverter, Photovoltaic (PV) strings, EV charging, Induction heating, Welding
  • RoHS Compliant
    Yes

Technical Documents

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