The AFGH4L60T120RWD-STD from onsemi is an Automotive-Grade N-channel IGBT that is designed using a field stop VII trench technology. It has a collector-emitter breakdown voltage of over 1200 V, a gate-emitter threshold voltage of 6 V, and a saturated collector-emitter of 1.68 V. This AEC-Q101-qualified IGBT has a collector current of up to 73 A and a pulsed collector current of less than 180 A. It is short-circuit rated and has low saturation voltage. This RoHS-compliant IGBT provides fast switching and has tightened parameter distribution. It is available in a through-hole package that measures 15.6 x 40.96 x 5 mm and is ideal for automotive E-compressors, automotive EV PTC heaters, and onboard charger applications.