The FGY100T120RWD from onsemi is a Trench Field Stop Discrete IGBT that is ideal for general applications requiring high power switches, motor control, and UPS applications. It has a collector-emitter voltage of up to 1200 V and a gate-emitter voltage of ±20 V. This IGBT has a DC collector current of less than 200 A, a DC forward current of up to 200 A, and a gate-emitter leakage current of ±400 nA. It has a power dissipation of less than 1071 W. This IGBT integrates cutting-edge field-stop 7th-generation technology with the Gen7 diode in a compact TO247 3-lead package. It achieves optimal performance, boasting low conduction losses and superior switching controllability. This RoHS-compliant IGBT is available in a through-hole package that measures 15.87 x 40.92 x 4.82 mm.