The FGY75T120SWD from onsemi is a Field Stop IGBT ideal for boost and inverter in solar systems, UPS, and energy storage system applications. It has a collector-emitter breakdown voltage of up to 1200 V, a saturated collector-emitter voltage of 1.68 V, and a gate-emitter voltage of 20 V. This IGBT has a continuous collector current of less than 150 A and a gate-emitter leakage current of up to 400 nA. It has a power dissipation of less than 714 W. This field stop IGBT is designed based on the novel field stop 7th generation IGBT technology with an integrated diode that offers low switching and conduction losses to ensure optimum performance. This RoHS-compliant IGBT has an optimized switching operation to achieve high efficiency. It has a positive temperature coefficient to support parallel operations, enabling efficient voltage drive. This IGBT is available in a through-hole package that measures 40.22 x 15.37 mm.