1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Renesas
  6. RJP1CS27DWS

RJP1CS27DWS

Download Datasheet Request Quote

Note : Your request will be directed to Renesas.

RJP1CS27DWS Image

The RJP1CS27DWS from Renesas is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.55 V, DC Collector Current 150 to 300 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current -1 to 1 uA. More details for RJP1CS27DWS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RJP1CS27DWS
  • Manufacturer
    Renesas
  • Description
    1250 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.55 V
  • DC Collector Current
    150 to 300 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -1 to 1 uA
  • Collector Emitter Voltage
    1250 V
  • Package
    Die
  • Package Type
    Surface Mount
  • Applications
    Inverter
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products