RJQ6008BDPM-00

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RJQ6008BDPM-00 Image

The RJQ6008BDPM from Renesas is a Single Switch IGBT that is ideal for power factor correction (PFC) applications. It has a collector-emitter voltage of up to 600 V, a gate-emitter voltage of ±30 V, and a saturated collector-emitter voltage of 1.8 V. This IGBT has a collector current of up to 13 A and a gate-emitter leakage current of ±1 µA. It consists of a built-in fast recovery diode and provides fast switching in a single package. This IGBT is available in a standard through-hole package that measures 15.6 x 39.6 mm.

Product Specifications

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Product Details

  • Part Number
    RJQ6008BDPM-00
  • Manufacturer
    Renesas
  • Description
    600 V Single Switch IGBT for Power Factor Correction Applications

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Dimensions
    15.6 x 39.6 mm
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    13 A
  • Peak Collector Current
    100 A
  • Peak Forward Current
    100 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    -1 to 1 µA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    29 W
  • Package
    TO-3PFM
  • Package Type
    Through Hole
  • Applications
    Power Factor Correction Applications
  • RoHS Compliant
    Yes

Technical Documents

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