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MGD623N

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MGD623N Image

The MGD623N from Sanken Electric is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.7 to 2.3 V, DC Collector Current 50 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current -0.5 to 0.5 uA. More details for MGD623N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGD623N
  • Manufacturer
    Sanken Electric
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.3 V
  • DC Collector Current
    50 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    -0.5 to 0.5 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    150 W
  • Package
    TO3P-3L
  • Package Type
    Through Hole
  • Industry
    Commercial, Industrial
  • Applications
    Microwave Oven, IH Cooker, Inverter Circuit
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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