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GSID200A120S5C1

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The GSID200A120S5C1 from SemiQ is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 1.95 V, DC Collector Current 200 to 382 A, Peak Collector Current 400 A, Junction Temperature 175 Degree C. More details for GSID200A120S5C1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GSID200A120S5C1
  • Manufacturer
    SemiQ
  • Description
    1200 V Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    106.4 x 61.4 x 30.8 mm
  • Saturated Collector Emitter Voltage
    1.65 to 1.95 V
  • DC Collector Current
    200 to 382 A
  • Peak Collector Current
    400 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1260 W
  • Package Type
    Chassis Mount
  • Applications
    High Power Converters, Motor Drives, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents
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