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GSID600A120S4B1

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The GSID600A120S4B1 from SemiQ is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.1 V, DC Collector Current 600 to 980 A, Peak Collector Current 1200 A, Junction Temperature 175 Degree C. More details for GSID600A120S4B1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GSID600A120S4B1
  • Manufacturer
    SemiQ
  • Description
    1200 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    150 x 62 x 21 mm
  • Saturated Collector Emitter Voltage
    1.70 to 2.1 V
  • DC Collector Current
    600 to 980 A
  • Peak Collector Current
    1200 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    3330 W
  • Package Type
    Chassis Mount
  • Applications
    Hybrid Electrical Vehicles, Automotive Applications, Commercial Agriculture Vehicles, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
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