STGWA35IH135DF2

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The STGWA35IH135DF2 from STMicroelectronics is a Field Stop Trench IGBT that is ideal for microwave ovens, resonant converters, and induction heating applications. It has a collector-emitter breakdown voltage of over 1350 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. This IGBT has a collector current of up to 70 A and a gate-emitter leakage current of less than ±250 nA. It uses an advanced proprietary trench gate field-stop structure whose performance has been optimized to provide low conduction and switching losses for soft commutation.


This trench IGBT integrates a freewheeling diode that has a low forward voltage drop. It has a tight parameter distribution such as low thermal resistance, maximum junction temperature, and a minimized tail current, thereby delivering enhanced efficiency. This IGBT is available in a through-hole package that measures 15.90 x 41.20 x 5.10 mm.

Product Specifications

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Product Details

  • Part Number
    STGWA35IH135DF2
  • Manufacturer
    STMicroelectronics
  • Description
    1350 V Field Stop Trench IGBT for Induction Heating Applications

General

  • Types
    Field Stop Trench IGBT
  • Gate Emitter Voltage
    20 V
  • Dimensions
    15.90 x 41.20 x 5.10 mm
  • Saturated Collector Emitter Voltage
    1.7 V
  • DC Collector Current
    70 A
  • Peak Collector Current
    140 A
  • DC Forward Current
    43 A
  • Peak Forward Current
    140 A
  • Gate Emitter Leakage Current
    250 nA
  • Operating Temperature
    -55 to 150 Degree C
  • Collector Emitter Voltage
    1350 V
  • Power Dissipation
    416 W
  • Package Type
    Through Hole
  • Applications
    Inverter microwave ovens, Induction cookers

Technical Documents

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