1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Toshiba
  6. GT50JR21

GT50JR21

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

GT50JR21 Image

The GT50JR21 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.45 to 2 V, DC Collector Current 49 to 50 A, DC Forward Current 40 A, Junction Temperature 175 Degree C. More details for GT50JR21 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GT50JR21
  • Manufacturer
    Toshiba
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.45 to 2 V
  • DC Collector Current
    49 to 50 A
  • DC Forward Current
    40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    115 to 230 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Dedicated to Current-Resonant Inverter Switching Applications
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products