Note : Your request will be directed to Toshiba.
The GT50N324 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.9 to 2.5 V, DC Collector Current 50 A, DC Forward Current 15 A, Junction Temperature 150 Degree C. More details for GT50N324 can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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