The WG50N65DHW from WeEN Semiconductors is a High-speed IGBT that is ideal for power factor correction, welding converters, solar inverters, industrial inverters, and uninterrupted power supply (UPS) applications. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of up to 2 V. This IGBT has a collector current of up to 50 A. It offers high speed with low switching losses. This RoHS-compliant IGBT features a trench gate field-stop design and offers low thermal resistance. It is available in a through-hole package that measures 41.5 x 15.75 x 5.2 mm.
