The AONG36322 from Alpha & Omega Semiconductor is a Dual-Asymmetric N-channel MOSFET that is ideal for DC-DC converters, servers, POL, telecom, and industrial applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of less than 6.8 milli-ohms. This MOSFET has a continuous drain current of up to 103 A and a power dissipation of less than 59 W. It utilizes trench power MOSFET technology, offering several advantages, including low drain-source on-resistance for reduced conduction losses and low gate charge for efficient switching. This MOSFET supports high current capability, which makes the transistor suitable for demanding applications. It complies with modern environmental and safety standards to ensure high reliability. It is available in a surface-mount package.