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ISM100NS1-5

MOSFET by ISOCOM (59 more products)
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The ISM100NS1-5 from ISOCOM is a MOSFET with Continous Drain Current 5.0 A, Drain Source Resistance 1.40 to 2.0 ohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for ISM100NS1-5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM100NS1-5
  • Manufacturer
    ISOCOM
  • Description
    1000 V, 5.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.0 A
  • Drain Source Resistance
    1.40 to 2.0 ohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    40 nC
  • Switching Speed
    30 to 200 ns
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Surface Mount
  • Package
    SMD 1.0
  • Applications
    Load switch, Military/High-reliability systems, Aircraft controls, DC/DC converter, Open framed power supply
  • Note
    Input Capacitance :- 2300 pF

Technical Documents
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